SI1012R/x vishay siliconix new product document number: 71166 s-02464?rev. a, 25-oct-00 www.vishay.com 1 n-channel 1.8-v (g-s) mosfet
v ds (v) r ds(on) ( ) i d (ma) 0.70 @ v gs = 4.5 v 600 20 0.85 @ v gs = 2.5 v 500 1.25 @ v gs = 1.8 v 350
high-side switching low on-resistance: 0.7 low threshold: 0.8 v (typ) fast swtiching speed: 10 ns 1.8-v operation gate-source esd protection ease in driving switches low offset (error) voltage low-voltage operation high-speed circuits low battery voltage operation drivers: relays, solenoids, lamps, hammers, displays, memories battery operated systems power supply converter circuits load/power switching cell phones, pagers ordering information: sc-75a (sot? 416): SI1012R?marking code : c sc-89 (sot? 490): si1012x?marking code: a top view 2 1 s d g 3 sc-75a or sc-89
parameter symbol 5 secs steady state unit drain-source voltage v ds 20 gate-source voltage v gs 6 v b t a = 25 c 600 500 continuous drain current (t j = 150 c) b t a = 85 c i d 400 350 pulsed drain current a i dm 1000 ma continuous source current (diode conduction) b i s 275 250 t a = 25 c 175 150 maximum power dissipation b for sc-75 t a = 85 c 90 80 t a = 25 c p d 275 250 mw maximum power dissipation b for sc-89 t a = 85 c 160 140 operating junction and storage temperature range t j , t stg ?55 to 150 c gate-source esd rating (hbm, method 3015) esd 2000 v notes a. pulse width limited by maximum junction temperature. b. surface mounted on fr4 board.
SI1012R/x vishay siliconix new product www.vishay.com 2 document number: 71166 s-02464 ? rev. a, 25-oct-00
parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.45 v gate-body leakage i gss v ds = 0 v, v gs = 4.5 v 0.5 1.0 a v ds = 16 v, v gs = 0 v 0.3 100 na zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v, t j = 85 c 5 a on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 700 ma v gs = 4.5 v, i d = 600 ma 0.41 0.70 drain-source on-state resistance a r ds(on) v gs = 2.5 v, i d = 500 m a 0.53 0.85 ds(on) v gs = 1.8 v, i d = 350 m a 0.70 1.25 forward transconductance a g fs v ds = 10 v, i d = 400 ma 1.0 s diode forward voltage a v sd i s = 150 ma, v gs = 0 v 0.8 1.2 v dynamic b total gate charge q g 750 gate-source charge q gs v ds = 10 v, v gs = 4.5 v, i d = 250 ma 75 pc gate-drain charge q gd 225 turn-on delay time t d(on) 5 rise time t r v dd = 10 v, r l = 47 5 turn-off delay time t d(off) v dd = 10 v, r l = 47 i d 200 ma, v gen = 4.5 v, r g = 10 25 ns fall time t f 11 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. 0 200 400 600 800 1000 1200 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 5 thru 1.8 v t c = ? 55 c 125 c 25 c output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) 1 v i d - drain current (ma)
SI1012R/x vishay siliconix new product document number: 71166 s-02464 ? rev. a, 25-oct-00 www.vishay.com 3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ? on-resistance ( r ds(on) ) 0 20 40 60 80 100 0 4 8 12 16 20 0.60 0.80 1.00 1.20 1.40 1.60 ? 50 ? 25 0 25 50 75 100 125 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 0.0 0.8 1.6 2.4 3.2 4.0 0 200 400 600 800 1000 v ds ? drain-to-source voltage (v) c rss c oss c iss v ds = 10 v i d = 250 ma i d ? drain current (ma) v gs = 4.5 v i d = 350 ma v gs = 1.8 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) c ? capacitance (pf) v gs capacitance on-resistance vs. junction temperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) 0 1 2 3 4 5 0123456 i d = 350 ma 1000 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (ma) i s v gs = 4.5 v i d = 200 ma v gs = 2.5 v v gs = 1.8 v i d = 350 ma t j = 125 c t j = 25 c t j = ? 55 c 10 100
SI1012R/x vishay siliconix new product www.vishay.com 4 document number: 71166 s-02464 ? rev. a, 25-oct-00 ? 0.3 ? 0.2 ? 0.1 ? 0.0 0.1 0.2 0.3 ? 50 ? 25 0 25 50 75 100 125 i d = 0.25 ma threshold voltage variance vs. temperature variance (v) v gs(th) t j ? temperature ( c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ? 50 ? 25 0 25 50 75 100 125 i gss vs. temperature t j ? temperature ( c) i gss ? ( a) 0 1 2 3 4 5 6 7 ? 50 ? 25 0 25 50 75 100 125 bv gss vs. temperature t j ? temperature ( c) 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient (sc-75a) square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 833 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm bv gss ? gate-to-source breakdown voltage (v) v gs = 4.5 v
SI1012R/x vishay siliconix new product document number: 71166 s-02464 ? rev. a, 25-oct-00 www.vishay.com 5 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance
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